sot23 npn silicon planar medium power transistor issue 3 - october 1995 j features * low equivalent on-resistance; r ce(sat) 210m w at 1a complementary type - fmmt591 partmarking detail - 491 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 60 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 100 na v cb =60v collector cut-off current i ces 100 na v ces =60v emitter cut-off current i ebo 100 na v eb =4v collector-emitter saturation voltage v ce(sat) 0.25 0.50 v v i c =500ma, i b =50ma* i c =1a, i b =100ma* base-emitter saturation voltage v be(sat) 1.1 v i c =1a, i b =100ma* base-emitter turn on voltage v be(on) 1.0 v i c =1a, v ce =5v* static forward current transfer ratio h fe 100 100 80 30 300 i c =1ma, v ce =5v i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT491 c b e sot23 3 - 115 FMMT491 3 - 116 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 100 0 300 200 400 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 1.2 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25c 0.2 0.3 0.4 0.5 i c /i b =10 10a 1a +100 c -55 c +25 c +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 v ce =5v v ce =5v 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1v 10v 100v 1s dc 100ms 10ms 100us 1ms 1v 0 1ma 0.01 i c /i b =50 0.6 0.1 0.2 0.3 0.4 0.5 0.6 typical characteristics
sot23 npn silicon planar medium power transistor issue 3 - october 1995 j features * low equivalent on-resistance; r ce(sat) 210m w at 1a complementary type - fmmt591 partmarking detail - 491 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 60 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 100 na v cb =60v collector cut-off current i ces 100 na v ces =60v emitter cut-off current i ebo 100 na v eb =4v collector-emitter saturation voltage v ce(sat) 0.25 0.50 v v i c =500ma, i b =50ma* i c =1a, i b =100ma* base-emitter saturation voltage v be(sat) 1.1 v i c =1a, i b =100ma* base-emitter turn on voltage v be(on) 1.0 v i c =1a, v ce =5v* static forward current transfer ratio h fe 100 100 80 30 300 i c =1ma, v ce =5v i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT491 c b e sot23 3 - 115 FMMT491 3 - 116 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 100 0 300 200 400 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 1.2 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25c 0.2 0.3 0.4 0.5 i c /i b =10 10a 1a +100 c -55 c +25 c +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 v ce =5v v ce =5v 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1v 10v 100v 1s dc 100ms 10ms 100us 1ms 1v 0 1ma 0.01 i c /i b =50 0.6 0.1 0.2 0.3 0.4 0.5 0.6 typical characteristics
|
